ANFF-Q has facilities located across two sites: The University of Queensland (UQ) Site and Griffith University (GU) Site.


Australian Institute for Bioengineering and Nanotechnology (AIBN)

Located on levels 2 and 4 of the AIBN building (#75) are the following ANFF-Q facilities:

  • Class 1 000 cleanroom
  • Class 10 000 cleanroom
  • PC2 laboratory
  • Device fabrication facilities
  • Materials characterisation facilities
  • Administration offices

Link: http://www.aibn.uq.edu.au/

Centre for Organic Photonics & Electronics (COPE)

COPE, located on level 9 of the Chemistry building (#68), houses the following ANFF-Q facilities:

  • Class 1 000 cleanroom
  • Synthetic and purifications facilities
  • Analytical facilities
  • Device fabrication facilities

Link: http://www.physics.uq.edu.au/cope/

Long Pocket Campus

UQ’s Long Pocket campus houses ANFF-Q’s dedicated class 10 000 soft lithography cleanroom.

For information on how to get to The University of Queensland please refer to the transport guide.


Queensland Microtechnology Facility (QMF)

The QMF, part of the Queensland Micro- and Nanotechnology Centre (QMNC), houses specialised materials development fabrication equipment for microelectronics, micro electromechanical systems (MEMS) and microfluidics. Aimed at bridging the gap between University research and Industry, the facility provides unique integration of research flexibility and processing at semiconductor-industry standards. Mainly focused on silicon carbide technology, the QMF supports the full range of activities from research and development through to pilot production.

SiC on Si wafer supply

We actively seek collaboration for new research projects using our silicon carbide on silicon (SiC on Si) material in order to evidence the advantages of this material in a broad range of applications. The superior properties and low cost of SiC on Si, makes it an attractive material for new product development, not only in harsh environments but also for the improved performance of existing devices. The use of mature standard semiconductor fabrication processes enables commercial use of this emerging material. Our standard epitaxial processes were developed on 150 mm wafers with film thicknesses of up to 1 µm.  However, we can deposit on wafers from 2” to 300 mm with excellent film thickness control and uniformity. A range of deposition techniques can be provided to target specific applications. The mechanical performance and chemical resistance of SiC is excellent. With outstanding harsh environment temperature stability, the interface of the SiC to Si can provide exceptional diode characteristics from the n-type SiC and p-type Si heterojunction; these characteristics are retained, and not degraded, even after subjecting the materials to temperatures well above 1 100 °C.

For further information about SiC on Si research and wafer supply, please contact Operations Director Alan Iacopi.

QMF houses the following ANFF-Q facilities:

  • Class 100 lithography cleanroom
  • Class 1 000 cleanroom
  • 150 mm silicon wafer processing
  • 100 mm silicon carbide wafer processing
  • Unique production equipment for epitaxial growth of silicon carbide films on silicon wafers up to 300 mm
  • Raman spectroscopy laboratory with atomic force microscopy

Link: https://www.griffith.edu.au/engineering-information-technology/queensland-microtechnology-facility

For information on how to get to Griffith University please refer to the transport and parking page.