Etching

deep-reactive-ion-etcher-drieDeep reactive ion etcher (DRIE)

The Plasma-Therm Versaline DRIE system is an inductively coupled plasma (ICP) etch system for deep silicon etching using the Bosch process. The deep silicon etching (DSE) process alternates between deposition and isotropic etching in a chamber with an ICP configuration. A conformal polymer is deposited, and then the polymer is removed only from the horizontal surfaces, allowing isotropic etching during the next step. The deposition gas is typically C4F8 and the etching gas is commonly SF6.

The DSE technology has been developed to achieve extremely high aspect ratio features on silicon substrates. DSE provides:

  • High silicon (Si) etch rate
  • Good etch profile quality
  • Improved SOI (silicon on insulator) etch performance

Examples of use:

It is used for the development of:

  • Microelectromechanical systems (MEMS)
  • DRAM memory circuits

Purpose:

To create deep, often steep sided trenches and other structures in silicon wafers. To produce nanopatches for Bio-application.

Material systems:

Silicon only.

Scale/volume:

6 inch wafer.

Specifications/resolution:

Fast silicon etch rate 3 – 5 µm/min with a deep vertical wall. In addition, etching parameters can be adjusted to make different shapes. Gases: SF6, C4F8, argon and oxygen.

Model:

Plasma-Therm Versaline DRIE system

Site:

The University of Queensland

Location:

Class 10 000 cleanroom, Level 2E, AIBN (Bldg #75), St Lucia

Instrument Contact:

Kai-Yu Liu


dicing-sawDicing saw

The ADT 7100 precision dicing saw is used to cut substrates into individual chips or dice. It employs a high-speed spindle fitted with an extremely thin diamond blade to cut with high precision, semiconductor wafers, glass, ceramics and other types of materials. It is capable of processing up to 8 inch wafers.

The dicing machine runs at high power (2.4 kW), which makes this instrument capable of cutting hard and thick materials like bonded wafers.

Examples of use

ADT Model 7100 series is an industry leading platform designed for a variety of applications such as:

  • ceramic substrates and capacitors
  • automotive sensors
  • glass
  • glass on silicon
  • PZT
  • SAW filters
  • sensors and MEMS
  • LED and LED on PCB packages
  • package singulation (BGA, QFN)
  • LTCC
  • opto-electronic components
  • IC wafers

Purpose:

Dicing of silicon and other wafers.

Material systems:

Silicon, glass, germanium and III IV materials wafers.

Scale/volume:

Single wafer processing up to 8 inch size.

Specifications/resolution:

Saw blade minimal width of 20 µm with space resolution of 0.1 µm.

Axis resolution: Y: 200 nm, Z: 200 nm.

Accuracy: Y: 1.5 µm, Z: 2 µm.

Feed rate: up to 350 mm/s.

Model:

ADT 7100 precision dicing saw

Site:

The University of Queensland

Location:

PC2 Lab, Level 2E, AIBN (Bldg #75), St Lucia

Instrument Contact:

Elliot Cheng


plasma-etching-equipment-lam-4802Plasma etching equipment

The LAM AutoEtch 480 performs fully automated, single-sided etching of single wafers using a semi isotropic plasma dry etch process.

The system is set for handling of 150 mm wafers through a load lock system. Smaller wafers and fragments can be processed on 150 mm carrier wafers. Standard processes include resist or organic strip using oxygen and oxide/nitride/silicon carbide etch processes using SF6 chemistry.

As SF6 has one of the highest global warming potentials, the system exhaust is scrubbed by a BOC Thermal Processing Unit (TPU), which breaks down the exhaust gases to eliminate any environmental impact—targeting zero toxic and global warming gas emissions from processes gas.

For more detailed specifications and capabilities of the LAM AutoEtch see pdf files at Queensland Microtechnology Facility.

Purpose:

Semi isotropic plasma etch of dielectrics: SiO2, Si3N4, SiC and polymers.

Material systems:

Si wafers.

Scale/volume:

Auto handling 150 mm wafers.  Smaller samples etched on 150 mm carrier wafers.

Specifications/resolution:

Features >3 µm.

Model:

LAM AutoEtch 480

Site

Griffith University

Location:

Room 1.30, Level 1, QMF (Bldg N74), Nathan Campus

Instrument Contact:

Alan Iacopi


Reactive ion etching

Reactive ion etching (RIE) is a type of dry etching which uses chemically reactive plasma to remove material from substrates. ANFF-Q has two reactive ion etchers.

oxford-reactive-ion-etcher2Oxford reactive ion etcher

Oxford Instruments PlasmaPro 80 Reactive Ion Etcher(RIE) is a compact, small footprint system offering versatile reactive ion etch solutions on one platform with convenient open loading. The etcher is a turbo-pumped RIE system with backside helium cooling dedicated to processes involving Fluorine based gas chemistries such as CHF3, CF4, and SF6. Processes are available to etch silicon dioxide, silicon nitride, SiC and silicon, as well as polymer and surface treatment. It is easy to use and can process a wide range of substrate sizes, from small wafer pieces up to 200 mm (8”) diameter wafers.

Examples of use:

  • Microelectromechanical systems (MEMS)
  • DRAM memory circuits
  • Surface treatment
  • O2 ashing

Purpose:

Nano and micro etching of dielectric and silicon-based materials and polymers

Material systems:

Silicon only.

Scale/volume:

4 – 8 inch wafers.

Specifications/resolution:

With Oceanoptics endpoint detector.

Model:

Oxford Instruments PlasmaPro 80 Reactive Ion Etcher (RIE)

Site:

The University of Queensland

Location:

Class 10 000 cleanroom, Level 2E, AIBN (Bldg #75), St Lucia

Instrument Contact:

Kai-Yu Liu


Prog 200 reactive ion etcher

The Prog 200 reactive ion etcher is configured to run Ar gas only. It is a dedicated part of our high resolution soft lithography suite and it used for bonding PDMS to glass.

Examples of use:

PDMS bonding.

Purpose:

Bonding of PDMS to glass for soft lithography

Material systems:

PDMS and glass.

Scale/volume:

Single 4” wafer.

Specifications/resolution:

RF power range: 10 W – 200 W.

Model:

Prog 200 reactive ion etcher

Site:

The University of Queensland

Location:

Class 10 000 cleanroom, Level 3, Pandanus (Bldg #1022), Long Pocket

Instrument Contact:

Kai-Yu Liu


XeF2 Etcher

The custom-built XeF2 vapour etch system is for selective, isotropic silicon etching. The etch is almost infinitely selective to SiO2, Si3N4, and photoresist.  The chemical reaction between XeF2 and silicon occurs spontaneously and does not require a plasma, and is thus ideal for gentle releasing or undercutting of NEMS/MEMS devices where striction is a concern or careful stopping on suspended membranes.  Etches occur in timed pulses with configurable pressure, duration, and purge cycles.

Purpose:

Isotropic etching of silicon with almost infinite selectivity to SiO2, SiN and photoresist.

Material systems:

Silicon.

Scale/volume:

Up to a 4” wafer.

Specifications/resolution:

Custom made system with stainless unit. Base pressure of 10 mTorr, 1 cubic meter control valves, JVC video camera and Navistar microscope with 1 000 x zoom and 3 cm working distance with light box and fibre bundle. Etch rate up to several microns per minute.

Model:

XeF2 vapour etch system

Site:

The University of Queensland

Location:

Class 10 000 cleanroom, Level 2E, AIBN (Bldg #75), St Lucia

Instrument Contact:

Doug Mair