Dielectric layers such as silicon oxide (SiOx) and silicon nitride (SiNx) play an important role in the semiconductor industry. Chemical vapour deposition (CVD) is a popular technology for depositing dielectrics, particularly plasma-enhanced CVD (PECVD). PECVD is economically viable with high deposition rate (tens of nm min−1) and is very attractive for compound semiconductors as it is possible to obtain high-quality dielectrics at relatively low temperatures.
This seminar will focus on CVD techniques, particularly detailing Atomic Layer Deposition and PECVD techniques. An overview of SiNx properties will be discussed, correlating the structural, compositional and optical properties of PECVD SiNx layers to deposition parameters showing the variations of refractive index, N/Si ratio, H% incorporation. Also results of ammonia-free nitride layers will be shown and discussed. Finally stress-free nitride layers will be discussed along silicon oxi-nitride (SiON) layers.
Places are limited, so make sure you RSVP.
Wednesday, 28 November 2018
Level 4, Seminar Room
AIBN building (#75)
The University of Queensland
St Lucia 4072
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After a chemistry degree Fouad accomplished a PhD in Physics from Montpellier University (France) on epitaxy of InGaAsSb structures for laser applications. In 1986 he joined Eindhoven University of Technology in The Netherlands working on GaAs-based lasers/VCSELs/HEMTs, GaN-based HEMTs and InP-based photonic integrated circuits. Early 2009 he joined the Australian National University, Canberra, Australia, as the manager of an open access micro- and nano-fabrication facility spanning a large suite of equipment related to semiconductor technology.